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| ( DataSheet : www..com ) S DM9433 S amHop Microelectronics C orp. March , 2003 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -5.4A R DS (ON) S uper high dense cell design for low R DS (ON). 45 @ V G S = -4.5V 70 @ V G S = -2.7V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 5.4 20 2.6 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 www..com www..com S DM9433 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = -250uA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250uA VGS = -4.5V, ID = -5.1A VGS = -2.7V, ID = -2.0A VDS = -5V, VGS = -4.5V VDS = -15V, ID = - 5.3A Min Typ C Max Unit -20 -1 V uA 100 nA -0.7 V 45 m-ohm 70 m-ohm -20 13 1190 710 260 A S PF PF PF OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VD = -10V, ID = -1A, VGEN = -4.5V, R GE N = 6 -ohm 20 18 50 29 20 4 4.3 40 70 120 140 25 ns ns ns ns nC nC nC VDS =-10V, ID = -1A, VGS =-4.5V S DM9433 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol b Condition VGS = 0V, Is =-5.3A Min Typ C Max Unit -0.89 -1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS VSD 5 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 25 20 -55 C 25 C 20 16 -V G S =10,9,8,7,6,5,4,3V 15 -ID, Drain C urrent (A) -ID, Drain C urrent (A) T j=125 C 12 10 5 0 8 -V G S =2V 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) (Normalized) 20 3000 2500 1.6 1.4 1.2 1.0 0.8 0.6 F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=-5.1A C , C apacitance (pF ) 2000 1500 C is s 1000 500 0 C os s C rs s 0 5 10 15 0.4 -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DM9433 -B V DS S , Normalized Drain-S ource B reakdown V oltage -V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 25 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 20 15 10 5 V DS =-15V 0 0 5 10 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 80 -ID, Drain C urrent (A) 4 3 2 1 0 VDS =-10V ID=-1A 10 RD ON S( )L im it 10m 10 s 0m s 1 1s DC 0.1 0.03 V G S =-10V S ingle P uls e T A=25 C 0.1 1 10 20 50 0 3 6 9 12 15 18 21 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 3 S DM9433 -VDD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 |
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